Impact of thermal effects on simulation accuracy of nonlinear dynamics in semiconductor lasers

doi:10.1109/JSTQE.2005.853748

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lim, CG	en_US
dc.contributor.author	Iezekiel, S	en_US
dc.contributor.author	Snowden, CM	en_US
dc.date.accessioned	2014-12-08T15:18:36Z	-
dc.date.available	2014-12-08T15:18:36Z	-
dc.date.issued	2005-09-01	en_US
dc.identifier.issn	1077-260X	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/JSTQE.2005.853748	en_US
dc.identifier.uri	http://hdl.handle.net/11536/13386	-
dc.description.abstract	Simulations based on a carrier heating model are performed to investigate the behavior of a directly modulated 1.55-mu m InGaAsP distributed feedback (DFB) laser diode (LD). Results show that bandgap shrinkage has a significant effect on the simulated nonlinear behavior of LDs. However, the varying nature of lattice temperature and excess carrier energy relaxation is important to produce simulated results that agree with measured results.	en_US
dc.language.iso	en_US	en_US
dc.subject	chaos	en_US
dc.subject	laser stability	en_US
dc.subject	nonlinear optics	en_US
dc.subject	semiconductor lasers	en_US
dc.title	Impact of thermal effects on simulation accuracy of nonlinear dynamics in semiconductor lasers	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.doi	10.1109/JSTQE.2005.853748	en_US
dc.identifier.journal	IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS	en_US
dc.citation.volume	11	en_US
dc.citation.issue	5	en_US
dc.citation.spage	1228	en_US
dc.citation.epage	1235	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000234639100045	-
顯示於類別：	會議論文

文件中的檔案：

000234639100045.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。