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dc.contributor.authorLim, CGen_US
dc.contributor.authorIezekiel, Sen_US
dc.contributor.authorSnowden, CMen_US
dc.date.accessioned2014-12-08T15:18:36Z-
dc.date.available2014-12-08T15:18:36Z-
dc.date.issued2005-09-01en_US
dc.identifier.issn1077-260Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JSTQE.2005.853748en_US
dc.identifier.urihttp://hdl.handle.net/11536/13386-
dc.description.abstractSimulations based on a carrier heating model are performed to investigate the behavior of a directly modulated 1.55-mu m InGaAsP distributed feedback (DFB) laser diode (LD). Results show that bandgap shrinkage has a significant effect on the simulated nonlinear behavior of LDs. However, the varying nature of lattice temperature and excess carrier energy relaxation is important to produce simulated results that agree with measured results.en_US
dc.language.isoen_USen_US
dc.subjectchaosen_US
dc.subjectlaser stabilityen_US
dc.subjectnonlinear opticsen_US
dc.subjectsemiconductor lasersen_US
dc.titleImpact of thermal effects on simulation accuracy of nonlinear dynamics in semiconductor lasersen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1109/JSTQE.2005.853748en_US
dc.identifier.journalIEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICSen_US
dc.citation.volume11en_US
dc.citation.issue5en_US
dc.citation.spage1228en_US
dc.citation.epage1235en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000234639100045-
Appears in Collections:Conferences Paper


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