標題: Suppression of photo-bias induced instability for amorphous indium tungsten oxide thin film transistors with bi-layer structure
作者: Liu, Po-Tsun
Chang, Chih-Hsiang
Chang, Chih-Jui
光電工程學系
Department of Photonics
公開日期: 27-Jun-2016
摘要: This study investigates the instability induced by bias temperature illumination stress (NBTIS) for an amorphous indium-tungsten-oxide thin film transistor (a-IWO TFT) with SiO2 backchannel passivation layer (BPL). It is found that this electrical degradation phenomenon can be attributed to the generation of defect states during the BPL process, which deteriorates the photo-bias stability of a-IWO TFTs. A method proposed by adding an oxygen-rich a-IWO thin film upon the a-IWO active channel layer could effectively suppress the plasma damage to channel layer during BPL deposition process. The bi-layer a-IWO TFT structure with an oxygen-rich back channel exhibits superior electrical reliability of device under NBTIS. Published by AIP Publishing.
URI: http://dx.doi.org/10.1063/1.4954978
http://hdl.handle.net/11536/133917
ISSN: 0003-6951
DOI: 10.1063/1.4954978
期刊: APPLIED PHYSICS LETTERS
Volume: 108
Issue: 26
Appears in Collections:Articles