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dc.contributor.authorKao, CCen_US
dc.contributor.authorPeng, YCen_US
dc.contributor.authorYao, HHen_US
dc.contributor.authorTsai, JYen_US
dc.contributor.authorChang, YHen_US
dc.contributor.authorChu, JTen_US
dc.contributor.authorHuang, HWen_US
dc.contributor.authorKao, TTen_US
dc.contributor.authorLu, TCen_US
dc.contributor.authorKuo, HCen_US
dc.contributor.authorWang, SCen_US
dc.contributor.authorLin, CFen_US
dc.date.accessioned2014-12-08T15:18:37Z-
dc.date.available2014-12-08T15:18:37Z-
dc.date.issued2005-08-22en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2032598en_US
dc.identifier.urihttp://hdl.handle.net/11536/13391-
dc.description.abstractGaN-based vertical-cavity surface emitting laser with 3 lambda cavity and hybrid mirrors, consisting of the 25 pairs AlN/GaN dielectric Bragg reflector and the 8 pairs Ta2O5/SiO2, was fabricated. The laser action was achieved under the optical pumping at room temperature with a threshold pumping energy density of about 53 mJ/cm(2). The laser emits 448 nm blue wavelength with a linewidth of 0.25 nm and the laser beam has a degree of polarization of about 84%. (c) 2005 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleFabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN/GaN and Ta2O5/SiO2 distributed Bragg reflectoren_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2032598en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume87en_US
dc.citation.issue8en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000231310700005-
dc.citation.woscount35-
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