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完整後設資料紀錄
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dc.contributor.authorNguyen Dang Phuen_US
dc.contributor.authorLuc Huy Hoangen_US
dc.contributor.authorPham Khac Vuen_US
dc.contributor.authorKong, Meng-Hongen_US
dc.contributor.authorChen, Xiang-Baien_US
dc.contributor.authorWen, Hua Chiangen_US
dc.contributor.authorChou, Wu Chingen_US
dc.date.accessioned2017-04-21T06:56:06Z-
dc.date.available2017-04-21T06:56:06Z-
dc.date.issued2016-06en_US
dc.identifier.issn0957-4522en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s10854-016-4585-3en_US
dc.identifier.urihttp://hdl.handle.net/11536/133963-
dc.description.abstractDifferent crystalline phases BiVO4 nanoparticles (tetragonal-zircon, monoclinic-scheelite, and tetragonal-zircon/monoclinic-scheelite heterophase) have been prepared by fast microwave assisted method and annealing treatment. For the heterophase, the ratio of tetragonal-zircon and monoclinic-scheelite phases can be well controlled by controlling the annealing temperature. Furthermore, a tight interface junction has been formed between tetragonal-zircon BiVO4 and monoclinic-scheelite BiVO4 in a nanosize level. This tight interface junction can modify the electronic structure of BiVO4 nanoparticles, which would be very helpful for achieving high photocatalytic activity.en_US
dc.language.isoen_USen_US
dc.titleControl of crystal phase of BiVO4 nanoparticles synthesized by microwave assisted methoden_US
dc.identifier.doi10.1007/s10854-016-4585-3en_US
dc.identifier.journalJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICSen_US
dc.citation.volume27en_US
dc.citation.issue6en_US
dc.citation.spage6452en_US
dc.citation.epage6456en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000377898000128en_US
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