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dc.contributor.authorZheng, Guang-Tingen_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorWu, Meng-Chyien_US
dc.date.accessioned2017-04-21T06:56:06Z-
dc.date.available2017-04-21T06:56:06Z-
dc.date.issued2016-05en_US
dc.identifier.issn1071-0922en_US
dc.identifier.urihttp://dx.doi.org/10.1002/jsid.433en_US
dc.identifier.urihttp://hdl.handle.net/11536/133971-
dc.description.abstractA new gate driver has been designed and fabricated by amorphous silicon technology. With utilizing the concept of sharing the noise free block in a single stage for gate driver, dual-outputs signals could be generated in sequence. By increasing the number of output circuit block in proposed gate driver, number of outputs per stage could also be adding that improves the efficiency for area reduction. Besides, using single driving thin-film-transistor (TFT) for charging and discharging, the area of circuit is also decreased by diminishing the size of pulling down TFT. Moreover, the proposed gate driver has been successfully demonstrated in a 5.5-inch Full HD (1080xRGBx1920) TFT-liquid-crystal display panel and passed reliability tests of the supporting foundry.en_US
dc.language.isoen_USen_US
dc.subjectgate driveren_US
dc.subjectamorphous silicon (a-Si)en_US
dc.subjectthin film transistor(TFT)en_US
dc.titleDesign of dual-outputs-single-stage a-Si:H TFT gate driver for high resolution TFT-LCD applicationen_US
dc.identifier.doi10.1002/jsid.433en_US
dc.identifier.journalJOURNAL OF THE SOCIETY FOR INFORMATION DISPLAYen_US
dc.citation.volume24en_US
dc.citation.issue5en_US
dc.citation.spage330en_US
dc.citation.epage337en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000379248400008en_US
Appears in Collections:Articles


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