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dc.contributor.authorChen, YFen_US
dc.contributor.authorKu, MLen_US
dc.contributor.authorSu, KWen_US
dc.date.accessioned2014-12-08T15:18:37Z-
dc.date.available2014-12-08T15:18:37Z-
dc.date.issued2005-08-15en_US
dc.identifier.issn0146-9592en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OL.30.002107en_US
dc.identifier.urihttp://hdl.handle.net/11536/13398-
dc.description.abstractAn efficient tunable diode-pumped Nd:GdVO4 laser at 1083 nm has been constructed by suppressing the higher gain transition near 1063 nm. With 12.5 W diode pump power, the free-running output power centered about 1083 nm was up to 3.4 W, corresponding to an optical-to-optical conversion efficiency of 30.1%. When a simple uncoated etalon was used as a wavelength-selective element, the output power at each helium transition was higher than 2.5 W. (c) 2005 Optical Society of America.en_US
dc.language.isoen_USen_US
dc.titleHigh-power efficient tunable Nd : GdVO4 laser at 1083 nmen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OL.30.002107en_US
dc.identifier.journalOPTICS LETTERSen_US
dc.citation.volume30en_US
dc.citation.issue16en_US
dc.citation.spage2107en_US
dc.citation.epage2109en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000231072700019-
dc.citation.woscount40-
Appears in Collections:Articles