完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, YF | en_US |
dc.contributor.author | Ku, ML | en_US |
dc.contributor.author | Su, KW | en_US |
dc.date.accessioned | 2014-12-08T15:18:37Z | - |
dc.date.available | 2014-12-08T15:18:37Z | - |
dc.date.issued | 2005-08-15 | en_US |
dc.identifier.issn | 0146-9592 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1364/OL.30.002107 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/13398 | - |
dc.description.abstract | An efficient tunable diode-pumped Nd:GdVO4 laser at 1083 nm has been constructed by suppressing the higher gain transition near 1063 nm. With 12.5 W diode pump power, the free-running output power centered about 1083 nm was up to 3.4 W, corresponding to an optical-to-optical conversion efficiency of 30.1%. When a simple uncoated etalon was used as a wavelength-selective element, the output power at each helium transition was higher than 2.5 W. (c) 2005 Optical Society of America. | en_US |
dc.language.iso | en_US | en_US |
dc.title | High-power efficient tunable Nd : GdVO4 laser at 1083 nm | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1364/OL.30.002107 | en_US |
dc.identifier.journal | OPTICS LETTERS | en_US |
dc.citation.volume | 30 | en_US |
dc.citation.issue | 16 | en_US |
dc.citation.spage | 2107 | en_US |
dc.citation.epage | 2109 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000231072700019 | - |
dc.citation.woscount | 40 | - |
顯示於類別: | 期刊論文 |