完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLi, Yun-Jingen_US
dc.contributor.authorChang, Jet-Rungen_US
dc.contributor.authorChang, Shih-Pangen_US
dc.contributor.authorLin, Bo-Wenen_US
dc.contributor.authorYeh, Yen-Hsienen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorCheng, Yuh-Jenen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.date.accessioned2017-04-21T06:55:29Z-
dc.date.available2017-04-21T06:55:29Z-
dc.date.issued2016-09en_US
dc.identifier.issn1551-319Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JDT.2016.2557841en_US
dc.identifier.urihttp://hdl.handle.net/11536/134070-
dc.description.abstractWe demonstrated a full visible spectrum emission from a 3D multifacet microrod light-emitting diode (LED). The microrods were fabricated by top-down patterned etched and regrowth. Hexagonal {11-20} and {11-22} facets were first formed on the microrods, then gradually transformed to {10-10} and {10-11} facets. This facet evolution was attributed to the growth competition among different crystal planes. The multiple quantum wells grown on the microrods also followed this facet evolution and resulted in broad emission spectrum. The device can have direct white light emission covering full visible spectral range from 460 to 660 nm under electrical injection.en_US
dc.language.isoen_USen_US
dc.subjectGallium nitrideen_US
dc.subjectlight emitting diodeen_US
dc.subjectmultiple quantum wellsen_US
dc.subjectsemipolaren_US
dc.titleMultifacet Microrod Light-Emitting Diode With Full Visible Spectrum Emissionen_US
dc.identifier.doi10.1109/JDT.2016.2557841en_US
dc.identifier.journalJOURNAL OF DISPLAY TECHNOLOGYen_US
dc.citation.volume12en_US
dc.citation.issue9en_US
dc.citation.spage951en_US
dc.citation.epage956en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000382360600013en_US
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