標題: Scalable Patterning of MoS2 Nanoribbons by Micromolding in Capillaries
作者: Hung, Yu-Han
Lu, Ang-Yu
Chang, Yung-Huang
Huang, Jing-Kai
Chang, Jeng-Kuei
Li, Lain-Jong
Su, Ching-Yuan
電子物理學系
Department of Electrophysics
關鍵字: MoS2;nanoimprint;patterning;hydrogen evolution reaction (HER);field-effect transistors (FET)
公開日期: 17-八月-2016
摘要: In this study, we report a facile approach to prepare dense arrays of MoS2 nanoribbons by combining procedures. of micromolding in capillaries (MIMIC) and thermolysis of thiosalts ((NH4)(2)MoS4) as the printing ink. The obtained MoS2 nanoribbons had a "thickness reaching as. low as 3.9 nm, a width ranging from 157 to 465 nm, and a length up to 2 cm. MoS2 nanoribbons with an extremely high aspect ratio (lengthiwidtfi) of similar to 7.4 X 10(8) were achieved. The MoS2 pattern can be printed on versatile substrates, such as SiO2/Si, sapphire, Au film, FTO/glass, and graphene-coated glass. The degree of crystallinity of the as-prepared MoS2 was discovered to be adjustable by varying the temperature through postannealing. The high-temperature thermolysis (1000 degrees C) results in high-quality conductive samples, and field-effect transistors, based on the patterned MoS2 nanoribbons were demonstrated and characterized, where the carrier mobility was comparable to that of thin-film MoS2. In contrast, the low-temperature-treated samples (170 degrees C) result in a unique nanocrystalline MOSx structure (x approximate to 2.5), where the abundant and exposed edge sites were obtained from highly dense arrays of nanoribbon structures by this MIMIC patterning method,: The patterned MoSx was revealed to have superior electrocatalytic efficiency (an overpotential of similar to 211 mV at 10 mA/cm(2) and a Tafel slope of 43 mV/dec) in the hydrogen evolution reaction (HER) when compared to the thin-film MoS2. The report introduces a new concept for rapidly fabricating cost-effective and high-density MoS2/MoSx natiostructures on versatile substrates, which may pave the way for potential applications in nanoelectronics/optoelectronics and frontier energy materials.
URI: http://dx.doi.org/10.1021/acsami.6b05827
http://hdl.handle.net/11536/134086
ISSN: 1944-8244
DOI: 10.1021/acsami.6b05827
期刊: ACS APPLIED MATERIALS & INTERFACES
Volume: 8
Issue: 32
起始頁: 20993
結束頁: 21001
顯示於類別:期刊論文