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dc.contributor.authorChen, Bo-Weien_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorHung, Yu-Juen_US
dc.contributor.authorHuang, Shin-Pingen_US
dc.contributor.authorLiao, Po-Yungen_US
dc.contributor.authorYang, Chung-Yien_US
dc.contributor.authorChu, Ann-Kuoen_US
dc.contributor.authorWang, Terry Tai-Juien_US
dc.contributor.authorChang, Tsu-Chiangen_US
dc.contributor.authorSu, Bo-Yuanen_US
dc.contributor.authorKuo, Su-Chunen_US
dc.contributor.authorHuang, I-Yuen_US
dc.date.accessioned2017-04-21T06:55:39Z-
dc.date.available2017-04-21T06:55:39Z-
dc.date.issued2016-08en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2016.2584138en_US
dc.identifier.urihttp://hdl.handle.net/11536/134119-
dc.description.abstractThis letter investigates the effect of repeated uniaxial mechanical stress on bias-induced degradation behavior in polycrystalline thin-film transistors (TFTs). After 100 000 iterations of channel-width-direction mechanical compression, serious threshold voltage degradation and an abnormal hump are observed. Simulation indicates that the strongest mechanical stress occurs at both sides of the channel edge, between the polycrystalline silicon and gate insulator. Since these stress points produce oxide traps in the gate insulator, the degradation of threshold voltage shift and parasitic current path can be attributed to electron trapping at these intense mechanical stress points. In addition, the degradation becomes serious with diminishing TFT size.en_US
dc.language.isoen_USen_US
dc.subjectFlexible electronicsen_US
dc.subjectLTPS TFTsen_US
dc.subjecthumpen_US
dc.subjectmechanical bending stressen_US
dc.titleEffects of Repetitive Mechanical Bending Strain on Various Dimensions of Foldable Low Temperature Polysilicon TFTs Fabricated on Polyimideen_US
dc.identifier.doi10.1109/LED.2016.2584138en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume37en_US
dc.citation.issue8en_US
dc.citation.spage1010en_US
dc.citation.epage1013en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000380330000016en_US
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