完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, Bo-Wei | en_US |
dc.contributor.author | Chang, Ting-Chang | en_US |
dc.contributor.author | Hung, Yu-Ju | en_US |
dc.contributor.author | Huang, Shin-Ping | en_US |
dc.contributor.author | Liao, Po-Yung | en_US |
dc.contributor.author | Yang, Chung-Yi | en_US |
dc.contributor.author | Chu, Ann-Kuo | en_US |
dc.contributor.author | Wang, Terry Tai-Jui | en_US |
dc.contributor.author | Chang, Tsu-Chiang | en_US |
dc.contributor.author | Su, Bo-Yuan | en_US |
dc.contributor.author | Kuo, Su-Chun | en_US |
dc.contributor.author | Huang, I-Yu | en_US |
dc.date.accessioned | 2017-04-21T06:55:39Z | - |
dc.date.available | 2017-04-21T06:55:39Z | - |
dc.date.issued | 2016-08 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LED.2016.2584138 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/134119 | - |
dc.description.abstract | This letter investigates the effect of repeated uniaxial mechanical stress on bias-induced degradation behavior in polycrystalline thin-film transistors (TFTs). After 100 000 iterations of channel-width-direction mechanical compression, serious threshold voltage degradation and an abnormal hump are observed. Simulation indicates that the strongest mechanical stress occurs at both sides of the channel edge, between the polycrystalline silicon and gate insulator. Since these stress points produce oxide traps in the gate insulator, the degradation of threshold voltage shift and parasitic current path can be attributed to electron trapping at these intense mechanical stress points. In addition, the degradation becomes serious with diminishing TFT size. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Flexible electronics | en_US |
dc.subject | LTPS TFTs | en_US |
dc.subject | hump | en_US |
dc.subject | mechanical bending stress | en_US |
dc.title | Effects of Repetitive Mechanical Bending Strain on Various Dimensions of Foldable Low Temperature Polysilicon TFTs Fabricated on Polyimide | en_US |
dc.identifier.doi | 10.1109/LED.2016.2584138 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 37 | en_US |
dc.citation.issue | 8 | en_US |
dc.citation.spage | 1010 | en_US |
dc.citation.epage | 1013 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000380330000016 | en_US |
顯示於類別: | 期刊論文 |