完整後設資料紀錄
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dc.contributor.authorMenkir, Mengistu Gemechen_US
dc.contributor.authorSrinivasadesikan, Venkatesanen_US
dc.contributor.authorLee, Shyi-Longen_US
dc.date.accessioned2017-04-21T06:55:13Z-
dc.date.available2017-04-21T06:55:13Z-
dc.date.issued2016-10en_US
dc.identifier.issn1040-0400en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s11224-016-0758-1en_US
dc.identifier.urihttp://hdl.handle.net/11536/134222-
dc.description.abstractThe role of cesium fluoride (CsF) in aryl propargyl ether Claisen rearrangement and its mechanistic pathway have been investigated in gas and solvent phase using the density functional theory implemented in Gaussian 09. Our results indicate that the [3,3]-sigmatropic rearrangement is the rate-limiting step with Delta G (aEuro) value of 37.1 kcal/mol in solvent phase. Furthermore, the results show that the enolization of alpha-allenylketone intermediate (Int1-CsF) has a higher free energy barrier, which implies that the formation of benzopyran is not favored in the presence of CsF. However, the abstraction of the alpha-hydrogen atom in Int1-CsF with CsF shows a very low free energy barrier and is the most favored pathway for aryl propargyl ether Claisen rearrangement in the presence of CsF to form benzofuran. In the case of substituted aryl propargyl ethers, a methoxy group on the benzene ring lowers the activation barrier. The HOMO-LUMO, conformational and NBO analysis indicate that increasing methyl substitution on the propargyl residue enhances the rearrangement reaction.en_US
dc.language.isoen_USen_US
dc.subjectCesium fluorideen_US
dc.subjectAryl propargyl etheren_US
dc.subjectClaisen rearrangementen_US
dc.subjectDensity functional theoryen_US
dc.subjectBenzofuranen_US
dc.titleThe role of cesium fluoride in aryl propargyl ether Claisen rearrangement and its mechanistic elucidation: a theoretical studyen_US
dc.identifier.doi10.1007/s11224-016-0758-1en_US
dc.identifier.journalSTRUCTURAL CHEMISTRYen_US
dc.citation.volume27en_US
dc.citation.issue5en_US
dc.citation.spage1383en_US
dc.citation.epage1393en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000382995000005en_US
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