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dc.contributor.authorTsai, Ming-Lien_US
dc.contributor.authorKo, Jun-Yuen_US
dc.contributor.authorWang, Shin-Yuanen_US
dc.contributor.authorChien, Chao-Hsinen_US
dc.date.accessioned2017-04-21T06:55:20Z-
dc.date.available2017-04-21T06:55:20Z-
dc.date.issued2016-09en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2016.2587902en_US
dc.identifier.urihttp://hdl.handle.net/11536/134249-
dc.description.abstractWe investigate p-type GaSb MOS capacitors with various HfO2 thicknesses grown using an atomic layer deposition. GaSb surfaces treated with ex-situ chemical solution and in situ remote hydrogen plasma are inspected. After a series of etching steps, the GaSb surfaces exhibit smooth topography, indicating that this combination of treatments is capable of realizing ultrathin dielectric deposition. After etching processes, the ultrathin (approximately 3 nm) HfO2 layer deposited successfully on GaSb exhibit high-permittivity (approximately 21) properties as well as equivalent oxide thickness (EOT) of 0.75 nm, which can be attributed to the flat surface. To the best of our knowledge, the EOT of GaSb capacitor prepared using the exploited approach is record low. Furthermore, we find that the interlayer present after hydrogen plasma treatment and forming gas annealing could efficiently passivate interface state density and achieve high C-V modulation. Compared with the benchmark of gate leakage current versus EOT, the electrical performance with low gate leakage current of the GaSb MOS capacitors demonstrates the high feasibility of the proposed treatments.en_US
dc.language.isoen_USen_US
dc.subjectCapacitoren_US
dc.subjectdielectric interfaceen_US
dc.subjectequivalent oxide thickness (EOT)en_US
dc.subjectgallium antimonideen_US
dc.subjecthafnium oxideen_US
dc.subjecthydrogen plasmaen_US
dc.subjectsurface treatmenten_US
dc.titleInterface Characterization of HfO2/GaSb MOS Capacitors With Ultrathin Equivalent Oxide Thickness by Using Hydrogen Plasma Treatmenten_US
dc.identifier.doi10.1109/TED.2016.2587902en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume63en_US
dc.citation.issue9en_US
dc.citation.spage3459en_US
dc.citation.epage3465en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000384574400013en_US
Appears in Collections:Articles