Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hsiao, Chih-Jen | en_US |
dc.contributor.author | Minh-Thien-Huu Ha | en_US |
dc.contributor.author | Hsu, Ching-Yi | en_US |
dc.contributor.author | Lin, Yueh-Chin | en_US |
dc.contributor.author | Chang, Sheng-Po | en_US |
dc.contributor.author | Chang, Shoou-Jinn | en_US |
dc.contributor.author | Chang, Edward Yi | en_US |
dc.date.accessioned | 2017-04-21T06:55:20Z | - |
dc.date.available | 2017-04-21T06:55:20Z | - |
dc.date.issued | 2016-09 | en_US |
dc.identifier.issn | 1882-0778 | en_US |
dc.identifier.uri | http://dx.doi.org/10.7567/APEX.9.095502 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/134254 | - |
dc.description.abstract | GaSb epitaxial layers were directly grown on GaAs substrates by metal-organic chemical vapor deposition involving Sb interfacial treatment with optimized growth temperature and V/III ratio. The interfacial treatment effectively reduces the surface energy and strain energy difference, resulting in a quasi-2D growth mode. When the GaSb layer was grown at 520 degrees C, the strain induced by lattice mismatch was accommodated by 90 degrees dislocations with a period of 5.67 nm. By optimizing the V/III ratio, the surface roughness of the ultrathin GaSb/GaAs heterostructure was reduced, resulting in a reduced carrier scattering and improved electronic properties. (C) 2016 The Japan Society of Applied Physics | en_US |
dc.language.iso | en_US | en_US |
dc.title | Growth of ultrathin GaSb layer on GaAs using metal-organic chemical vapor deposition with Sb interfacial treatment | en_US |
dc.identifier.doi | 10.7567/APEX.9.095502 | en_US |
dc.identifier.journal | APPLIED PHYSICS EXPRESS | en_US |
dc.citation.volume | 9 | en_US |
dc.citation.issue | 9 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000383983700023 | en_US |
Appears in Collections: | Articles |