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dc.contributor.authorLin, JSen_US
dc.contributor.authorYang, KHen_US
dc.contributor.authorChen, SHen_US
dc.date.accessioned2014-12-08T15:18:41Z-
dc.date.available2014-12-08T15:18:41Z-
dc.date.issued2005-08-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.44.6178en_US
dc.identifier.urihttp://hdl.handle.net/11536/13425-
dc.description.abstractThe growth rate of thin-film-transistor liquid crystal display (TFT-LCD) industries is faster than predicted due to the possible replacement of a cathode-ray tube television (CRT-TV) by a liquid crystal display television (LCD-TV). The in-plane switching (IPS) mode has been known as an excellent technology for realizing a wide viewing angle for LCD-TV, but it has the drawback of a low aperture ratio. An advanced super-IPS (AS-IPS) structure with an organic insulator layer was invented to achieve a high aperture ratio with increasing manufacturing cost. In this paper, we proposed a simple method of analyzing the optimum thickness of the organic insulator layer for AS-IPS. We derived the capacitive coupling ratio (CCR) of the IPS cell and analyzed the delay time of the AS-IPS panel to quantify the crosstalk properties. Furthermore, we also analyzed our electrode structure (AS'-IPS), which not only increases substantially the aperture ratio over that of AS-IPS but also reduces the crosstalk using the same optimized thickness of the organic insulator layer.en_US
dc.language.isoen_USen_US
dc.subjectin-plane switching (IPS)en_US
dc.subjectliquid crystal display (LCD)en_US
dc.subjectcrosstalken_US
dc.subjectcapacitive coupling ratio (CCR)en_US
dc.titleOptimization on the thickness of organic insulator layer for advanced super-in-plane switching mode thin-film-transistor liquid crystal displaysen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.44.6178en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume44en_US
dc.citation.issue8en_US
dc.citation.spage6178en_US
dc.citation.epage6185en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000232029500061-
dc.citation.woscount3-
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