完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Liao, Chan-Yu | en_US |
dc.contributor.author | Lin, Hsiao-Chun | en_US |
dc.contributor.author | Wang, Chao-Lung | en_US |
dc.contributor.author | Lee, I-Che | en_US |
dc.contributor.author | Chou, Chia-Hsin | en_US |
dc.contributor.author | Li, Yu-Ren | en_US |
dc.contributor.author | Cheng, Huang-Chung | en_US |
dc.date.accessioned | 2017-04-21T06:55:19Z | - |
dc.date.available | 2017-04-21T06:55:19Z | - |
dc.date.issued | 2016-09 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LED.2016.2588735 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/134263 | - |
dc.description.abstract | High-performance Si thin-film transistors (TFTs) on the recessed-channel Si strips with the under-layered nitride film have been fabricated using excimer laser crystallization (ELC). A nitride film was added as a light absorption layer to suppress solidification along the edge of the Si strip. Thus, only one primary grain boundary perpendicular to the Si strip formed in the middle of the recessed region during ELC. The single-crystal-like Si TFTs fabricated on one-half of the recessed region are capable of excellent field-effect mobility of 640 cm(2)/V-s, with only minor deviation. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Excimer laser crystallization (ELC) | en_US |
dc.subject | light absorption layer | en_US |
dc.subject | single-crystal-like | en_US |
dc.subject | polycrystalline silicon (poly-Si) | en_US |
dc.subject | thin-film transistor (TFT) | en_US |
dc.title | Location-Controlled Single-Crystal-Like Silicon Thin-Film Transistors by Excimer Laser Crystallization on Recessed-Channel Silicon Strip With Under-Layered Nitride | en_US |
dc.identifier.doi | 10.1109/LED.2016.2588735 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 37 | en_US |
dc.citation.issue | 9 | en_US |
dc.citation.spage | 1135 | en_US |
dc.citation.epage | 1138 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000383099400015 | en_US |
顯示於類別: | 期刊論文 |