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dc.contributor.authorLiao, Chan-Yuen_US
dc.contributor.authorLin, Hsiao-Chunen_US
dc.contributor.authorWang, Chao-Lungen_US
dc.contributor.authorLee, I-Cheen_US
dc.contributor.authorChou, Chia-Hsinen_US
dc.contributor.authorLi, Yu-Renen_US
dc.contributor.authorCheng, Huang-Chungen_US
dc.date.accessioned2017-04-21T06:55:19Z-
dc.date.available2017-04-21T06:55:19Z-
dc.date.issued2016-09en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2016.2588735en_US
dc.identifier.urihttp://hdl.handle.net/11536/134263-
dc.description.abstractHigh-performance Si thin-film transistors (TFTs) on the recessed-channel Si strips with the under-layered nitride film have been fabricated using excimer laser crystallization (ELC). A nitride film was added as a light absorption layer to suppress solidification along the edge of the Si strip. Thus, only one primary grain boundary perpendicular to the Si strip formed in the middle of the recessed region during ELC. The single-crystal-like Si TFTs fabricated on one-half of the recessed region are capable of excellent field-effect mobility of 640 cm(2)/V-s, with only minor deviation.en_US
dc.language.isoen_USen_US
dc.subjectExcimer laser crystallization (ELC)en_US
dc.subjectlight absorption layeren_US
dc.subjectsingle-crystal-likeen_US
dc.subjectpolycrystalline silicon (poly-Si)en_US
dc.subjectthin-film transistor (TFT)en_US
dc.titleLocation-Controlled Single-Crystal-Like Silicon Thin-Film Transistors by Excimer Laser Crystallization on Recessed-Channel Silicon Strip With Under-Layered Nitrideen_US
dc.identifier.doi10.1109/LED.2016.2588735en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume37en_US
dc.citation.issue9en_US
dc.citation.spage1135en_US
dc.citation.epage1138en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000383099400015en_US
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