A ZnO/InN/GaN Heterojunction Photodetector with Extended Infrared Response

Title:	A ZnO/InN/GaN Heterojunction Photodetector with Extended Infrared Response
Authors:	Hsu, Lung-Hsing Hsu, Shun-Chieh Lee, Hsin-Ying Tsai, Yu-Lin Lin, Da-Wei Kuo, Hao-Chung Hwang, Yi-Chia Chen, Yin-Han He, Jr-Hau Cheng, Yuh-Jen Lin, Shih-Yen Lin, Chien-Chung 光電系統研究所照明與能源光電研究所光電工程學系 Institute of Photonic System Institute of Lighting and Energy Photonics Department of Photonics
Issue Date:	2015
Abstract:	An extended infrared photoresponse is observed in a ZnO/InN/GaN heterojunction diode with InN grown by MOCVD. The external quantum efficiency is measured between 1200 and 1800 nm and can be as high as 3.55%.
URI:	http://hdl.handle.net/11536/134290
ISBN:	978-1-55752-968-8
ISSN:	2160-9020
Journal:	2015 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)
Appears in Collections:	Conferences Paper