A ZnO/InN/GaN Heterojunction Photodetector with Extended Infrared Response

Hsu, Lung-Hsing; Hsu, Shun-Chieh; Lee, Hsin-Ying; Tsai, Yu-Lin; Lin, Da-Wei; Kuo, Hao-Chung; Hwang, Yi-Chia; Chen, Yin-Han; He, Jr-Hau; Cheng, Yuh-Jen; Lin, Shih-Yen; Lin, Chien-Chung

A ZnO/InN/GaN Heterojunction Photodetector with Extended Infrared Response

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2015

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An extended infrared photoresponse is observed in a ZnO/InN/GaN heterojunction diode with InN grown by MOCVD. The external quantum efficiency is measured between 1200 and 1800 nm and can be as high as 3.55%.

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https://ir.lib.nycu.edu.tw/handle/11536/134290

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A ZnO/InN/GaN Heterojunction Photodetector with Extended Infrared Response

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