Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hsieh, E. R. | en_US |
dc.contributor.author | Wang, Y. D. | en_US |
dc.contributor.author | Chung, Steve S. | en_US |
dc.contributor.author | Ke, J. C. | en_US |
dc.contributor.author | Yang, C. W. | en_US |
dc.contributor.author | Hsu, S. | en_US |
dc.date.accessioned | 2017-04-21T06:50:15Z | - |
dc.date.available | 2017-04-21T06:50:15Z | - |
dc.date.issued | 2016 | en_US |
dc.identifier.isbn | 978-1-5090-0638-0 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/134336 | - |
dc.description.abstract | The interfacial dipole and bulk trap in HKMG stack have been found to be significant to the work function variation (sigma V-WF), in addition to the metal grains. In order to differentiate their effects on sigma V-WF, a new variation plot is proposed and the dipole and trap effects can be distinguished. Here, we propose a simple experimental method to separate the effects of MG/HK and HK/IL interfacial dipoles. In pMOSFET, HK/IL dipoles dominate HK induced variation; MG/HK dipoles are dominant in nMOSFET. However, in terms of the reliability test, after PBTI stress, HK bulk traps play a major role in the variation of nMOSFET, while after NBTI, HK/IL dipoles are strengthened by hydrogen bonds and still dominant in work function variation of pMOSFET. Design guideline is provided to deal with the passivation of high-k traps by nitrogen concentration and the improvement of variability in HKMG CMOS devices. | en_US |
dc.language.iso | en_US | en_US |
dc.title | A New Variation Plot to Examine the Interfacial-dipole Induced Work-function Variation in Advanced High-k Metal-gate CMOS Devices | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2016 IEEE SYMPOSIUM ON VLSI TECHNOLOGY | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000390702200079 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Conferences Paper |