標題: High Photothermal Properties in Silicon Nanostructures
作者: Ren, Ting-Ting
Wei, Mao-Qugn
Hsiao, Chin-Chiang
Chen, Bo-Yi
Li, Mei-Yi
Liou, Jui-Min
Ko, Fu-Hsiang
Lai, Yu-Sheng
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2016
摘要: This research describes the p-type nanostalactites (p-type NS) with high photothermal conversion capability has been demonstrated by rapid INC process without extra heat treatment. In optical property, p-type NS has ultralow reflectance below 5 % and high light absorption due to rough structures in the broadband wavelength (350 nm -1100 nm). It looks like a black body. Silicon, an indirect band material, can release thermal energy during the recombination process of photo-generated electron-hole pairs. P-type NS converts photon energy into heat rapidly and then photothermal effect occurs. Then, the temperature change of p-type NS is faster in 10 second than bulk p-type silicon. These nanostructures can not only enhance thermal conversion efficiency but be regarded as a great heat absorber.
URI: http://hdl.handle.net/11536/134349
ISBN: 978-4-9908753-1-2
期刊: 2016 23RD INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD)
起始頁: 219
結束頁: 221
Appears in Collections:Conferences Paper