標題: Investigation of Hot Carrier Reliability of Ultrathin Poly-Si Nanobelt Junctionless (UTNB-JL) Transistors on Different Underlying Insulators
作者: Chang, Jen-Hong
Chung, Chun-Chih
Lin, Jer-Yi
Chao, Tien-Sheng
電子物理學系
Department of Electrophysics
關鍵字: ultrathin channel;Junctionless;hot carrier;oxide charge
公開日期: 2016
摘要: In this work, we investigate the hot carrier stress (HCS) of ultrathin poly-Si nanobelt junctionless transistors on different insulator (TEOS and Si3N4). Time exponent n suggests the oxide trap charge is the dominant mechanism. The subthreshold slope (S.S.) is improved by acceptor-like interface states generated after HCS, and different S.S. improvement between JL_O and JL_N is caused by surface roughness of channel films resulting from nucleation during channel deposition in LPCVD step.
URI: http://hdl.handle.net/11536/134352
ISBN: 978-1-5090-2439-1
ISSN: 2378-8593
期刊: 2016 5TH INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE)
Appears in Collections:Conferences Paper