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dc.contributor.authorChang, Wei-Lingen_US
dc.contributor.authorMeng, Chinchunen_US
dc.contributor.authorFu, Tzu-Chienen_US
dc.contributor.authorHuang, Guo-Weien_US
dc.date.accessioned2017-04-21T06:50:04Z-
dc.date.available2017-04-21T06:50:04Z-
dc.date.issued2016en_US
dc.identifier.isbn978-1-5090-0698-4en_US
dc.identifier.issn0149-645Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/134377-
dc.description.abstractThis paper demonstrates a millimeter-wave RF-to-DC converter based on Schottky-barrier diodes using 0.18-mu m CMOS technology. The Schottky-barrier diode has a cutoff frequency of 400 GHz and a low turn-on voltage of 0.3 V. In the RF-to-DC quadrupler, the difference in turn-on voltages between the Schottky-barrier diode and n-well to p-substrate parasitic pn junction prevents the pn junction from turning on with an effect similar to the Schottky diode clamp in Schottky TTL circuits. The input matching has a better than 10 dB return loss from 50 GHz to 100 GHz. The RF-to-DC quadrupler generates a 3.15 V DC voltage at 84 GHz.en_US
dc.language.isoen_USen_US
dc.subjectCMOSen_US
dc.subjectSchottky-barrier diodeen_US
dc.subjectmillimeter-waveen_US
dc.subjectRF-to-DC converteren_US
dc.titleE-Band RF-to-DC Converter Using Schottky Diode in 0.18-mu m CMOS Technologyen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2016 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS)en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000390313200305en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper