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dc.contributor.authorChen, Yichangen_US
dc.contributor.authorChen, Anpinen_US
dc.date.accessioned2017-04-21T06:49:41Z-
dc.date.available2017-04-21T06:49:41Z-
dc.date.issued2008en_US
dc.identifier.isbn978-3-540-87731-8en_US
dc.identifier.issn0302-9743en_US
dc.identifier.urihttp://hdl.handle.net/11536/134430-
dc.description.abstractFrom 1956, the definitions of learning according to Artificial Intelligence and Psychology to human mind/behavior are obviously different. Owing to the rapid development of the computing power, we have potential to enhance the learning mechanism of AI. This work tries to discuss the learning process from the traditional AI learning models which are almost based on trial and error style. Furthermore, some relative literatures have pointed out that teaching-base education would increase the learning efficiency better than trial and error style. That is the reason we enhance the learning process to propose a dual-perspective learning mechanism, E&R-R XCS. As for XCS is a better accuracy model of AI, we have applied it as a basement and proposed to develop an intelligence-learning model. Finally, this work will give the inference discussion about the accuracy and accumulative performance of XCS, R-R XCS, and E&R-R XCS respectively, and the obvious summary would be concluded. That is, the proposed dual-learning mechanism has enhanced successfully.en_US
dc.language.isoen_USen_US
dc.subjectArtificial intelligenceen_US
dc.subjectPsychologyen_US
dc.subjectTrial and erroren_US
dc.subjectTeaching-base educationen_US
dc.subjectIntelligence-Learningen_US
dc.titleA Dual-Mode Learning Mechanism Combining Knowledge-Education and Machine-Learningen_US
dc.typeProceedings Paperen_US
dc.identifier.journalADVANCES IN NEURAL NETWORKS - ISNN 2008, PT I, PROCEEDINGSen_US
dc.citation.volume5263en_US
dc.citation.spage87en_US
dc.citation.epage+en_US
dc.contributor.department資訊管理與財務金融系 註:原資管所+財金所zh_TW
dc.contributor.departmentDepartment of Information Management and Financeen_US
dc.identifier.wosnumberWOS:000260660500011en_US
dc.citation.woscount0en_US
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