Study of Front End of CMOS RFID Tag with Inductively-coupled Broadband Antenna

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Kao, Yao-Huang	en_US
dc.contributor.author	Liu, Chia-Chuan	en_US
dc.contributor.author	Kuo, Hung-Chang	en_US
dc.date.accessioned	2017-04-21T06:49:43Z	-
dc.date.available	2017-04-21T06:49:43Z	-
dc.date.issued	2007	en_US
dc.identifier.isbn	978-1-4244-0748-4	en_US
dc.identifier.uri	http://hdl.handle.net/11536/134440	-
dc.description.abstract	Radio frequency identification (RFID) has received much attention. The ac to dc conversion efficiency is crucial for long range application in UHF band. The front end of the passive tag combined with the broadband antenna at 915MHz is investigated. Two subjects of high efficient charge-pump and antenna matching are focused. The chip is fabricated by TSMC 0.18um 1P6M CMOS. The antenna is on the 0.4mm FR4 pc board. With ten stages of capacitor-diode pair, the multiplier factor is 8.575 and dc voltage can reach to 3.4V and is regulated to 850mV with input power lies between 6 similar to 8dBm. Under matching, the communication range can reach to 4m.	en_US
dc.language.iso	en_US	en_US
dc.subject	RFID	en_US
dc.subject	tag	en_US
dc.subject	charge pump	en_US
dc.title	Study of Front End of CMOS RFID Tag with Inductively-coupled Broadband Antenna	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2007 ASIA PACIFIC MICROWAVE CONFERENCE, VOLS 1-5	en_US
dc.citation.spage	1915	en_US
dc.citation.epage	+	en_US
dc.contributor.department	電信工程研究所	zh_TW
dc.contributor.department	Institute of Communications Engineering	en_US
dc.identifier.wosnumber	WOS:000261353301097	en_US
dc.citation.woscount	0	en_US
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