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dc.contributor.authorShi, JWen_US
dc.contributor.authorHsu, HCen_US
dc.contributor.authorHuang, FHen_US
dc.contributor.authorLiu, WSen_US
dc.contributor.authorChyi, JIen_US
dc.contributor.authorLu, JYen_US
dc.contributor.authorSun, CKen_US
dc.contributor.authorPan, CLen_US
dc.date.accessioned2014-12-08T15:18:42Z-
dc.date.available2014-12-08T15:18:42Z-
dc.date.issued2005-08-01en_US
dc.identifier.issn1041-1135en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LPT.2005.850886en_US
dc.identifier.urihttp://hdl.handle.net/11536/13447-
dc.description.abstractWe demonstrate a novel p-i-n photodiode (PD) structure, the separated-transport-recombination PD, which can greatly relieve the tradeoffs among the resistance-capacitance bandwidth limitation, responsivity, and output saturation power performance. Incorporating a short carrier lifetime (less than 1 ps) epitaxial layer to serve as a recombination center, this device exhibits superior speed and power performance to a control PD that has a pure intrinsic photoabsorption layer. Our demonstrated structure can also eliminate the bandwidth degradation problem of the high-speed photodetector, whose active photoabsorption layer is fully composed of short lifetime (similar to 1 ps) materials, under high dc bias voltages.en_US
dc.language.isoen_USen_US
dc.subjectphotodiode (PD)en_US
dc.subjecthigh-power photodiodeen_US
dc.subjectoptical receiversen_US
dc.titleSeparated-transport-recombination p-i-n photodiode for high-speed and high-power performanceen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LPT.2005.850886en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.citation.volume17en_US
dc.citation.issue8en_US
dc.citation.spage1722en_US
dc.citation.epage1724en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000230799100046-
dc.citation.woscount13-
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