標題: 28V high-linearity and rugged InGaP/GaAs power HBT
作者: Wang, Nanlei Larry
Ma, Wenlong
Xu, Sarah
Camargo, Edmar
Sun, Xiaopeng
Hu, Peter
Tang, Zhuang
Chau, Hin-Fai Frank
Chen, Amelia
Lee, C. P.
交大名義發表
National Chiao Tung University
關鍵字: heterojunction bipolar transistor;power bipolar amplifiers;interchannel interference;power amplifiers
公開日期: 2006
摘要: This paper reports on the improvement of a previously developed InGaP/GaAs HBT for 24-28V linear power operation. The improvements achieved were: application of dynamic bias circuit which improves the ACLR under WCDMA modulation; modification of device technology improving ruggedness to sustain 10:1 VSWR at 30V collector bias under P1dB driving conditions and over 6 dB of gain compression; maintenance of lifetime and reliability simultaneously. Building blocks of HBT were strung together for higher power and good scaling of performance was achieved supporting the validity of the layout approach and the thermal design. Devices delivering P-1dB = 8W under CW conditions provided ACLR = -50 dBc at 8.5 dB back-off and 16% efficiency for WCDMA signal (PAR=8.7 dB) at 2.14 GHz. Lifetime test over 3000 hours was repeated for 28V bias and 0.05mA/um(2) current density at 315 degree C junction temperature. Therefore, the InGaP/GaAs HBT technology is mature now for the high linearity power amplification.
URI: http://dx.doi.org/10.1109/MWSYM.2006.249833
http://hdl.handle.net/11536/134480
ISBN: 978-0-7803-9541-1
ISSN: 0149-645X
DOI: 10.1109/MWSYM.2006.249833
期刊: 2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5
起始頁: 881
結束頁: +
顯示於類別:會議論文