Optimization of gate insulator material for GaN MIS-HEMT

標題:	Optimization of gate insulator material for GaN MIS-HEMT
作者:	Lin, Y. C. Lin, T. W. Wu, C. H. Yao, J. N. Hsu, H. T. Shih, W. C. Kakushima, K. Tsutsui, K. Iwai, H. Chang, E. Y. 材料科學與工程學系光電系統研究所電子工程學系及電子研究所國際半導體學院 Department of Materials Science and Engineering Institute of Photonic System Department of Electronics Engineering and Institute of Electronics International College of Semiconductor Technology
關鍵字:	SiO2;La2O3;MIS;Ga HEMT;power device
公開日期:	2016
摘要:	Metal-insulator-semiconductor (M-I-S) structure has been employed for GaN HEMTs to suppress gate leakage current. In this work, various gate insulator materials including SiO2, HfO2, La2O3, HfO2/SiO2 and La2O3/SiO2 were investigated for GaN MIS-HEMT application. It is found that GaN MIS-HEMT with La2O3/SiO2 composite oxide results in better device performance and reliability as compared to other gate insulator materials.
URI:	http://hdl.handle.net/11536/134542
ISBN:	978-1-4673-8770-5
期刊:	2016 28TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)
起始頁:	115
結束頁:	118
顯示於類別：	會議論文