標題: Optimization of gate insulator material for GaN MIS-HEMT
作者: Lin, Y. C.
Lin, T. W.
Wu, C. H.
Yao, J. N.
Hsu, H. T.
Shih, W. C.
Kakushima, K.
Tsutsui, K.
Iwai, H.
Chang, E. Y.
材料科學與工程學系
光電系統研究所
電子工程學系及電子研究所
國際半導體學院
Department of Materials Science and Engineering
Institute of Photonic System
Department of Electronics Engineering and Institute of Electronics
International College of Semiconductor Technology
關鍵字: SiO2;La2O3;MIS;Ga HEMT;power device
公開日期: 2016
摘要: Metal-insulator-semiconductor (M-I-S) structure has been employed for GaN HEMTs to suppress gate leakage current. In this work, various gate insulator materials including SiO2, HfO2, La2O3, HfO2/SiO2 and La2O3/SiO2 were investigated for GaN MIS-HEMT application. It is found that GaN MIS-HEMT with La2O3/SiO2 composite oxide results in better device performance and reliability as compared to other gate insulator materials.
URI: http://hdl.handle.net/11536/134542
ISBN: 978-1-4673-8770-5
期刊: 2016 28TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)
起始頁: 115
結束頁: 118
Appears in Collections:Conferences Paper