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dc.contributor.authorLin, Y. C.en_US
dc.contributor.authorLin, T. W.en_US
dc.contributor.authorWu, C. H.en_US
dc.contributor.authorYao, J. N.en_US
dc.contributor.authorHsu, H. T.en_US
dc.contributor.authorShih, W. C.en_US
dc.contributor.authorKakushima, K.en_US
dc.contributor.authorTsutsui, K.en_US
dc.contributor.authorIwai, H.en_US
dc.contributor.authorChang, E. Y.en_US
dc.date.accessioned2017-04-21T06:49:24Z-
dc.date.available2017-04-21T06:49:24Z-
dc.date.issued2016en_US
dc.identifier.isbn978-1-4673-8770-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/134542-
dc.description.abstractMetal-insulator-semiconductor (M-I-S) structure has been employed for GaN HEMTs to suppress gate leakage current. In this work, various gate insulator materials including SiO2, HfO2, La2O3, HfO2/SiO2 and La2O3/SiO2 were investigated for GaN MIS-HEMT application. It is found that GaN MIS-HEMT with La2O3/SiO2 composite oxide results in better device performance and reliability as compared to other gate insulator materials.en_US
dc.language.isoen_USen_US
dc.subjectSiO2en_US
dc.subjectLa2O3en_US
dc.subjectMISen_US
dc.subjectGa HEMTen_US
dc.subjectpower deviceen_US
dc.titleOptimization of gate insulator material for GaN MIS-HEMTen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2016 28TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)en_US
dc.citation.spage115en_US
dc.citation.epage118en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department國際半導體學院zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentInternational College of Semiconductor Technologyen_US
dc.identifier.wosnumberWOS:000392269000028en_US
dc.citation.woscount0en_US
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