The Effect of Surface Passivation on the Electrical Performance of AlG aN/GaNHEMTs with Slant Field Plates

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Hsu, Heng-Tung	en_US
dc.contributor.author	Lin, Yueh-Chin	en_US
dc.contributor.author	Huang, Lu-Che	en_US
dc.contributor.author	Chang, Chia-Hua	en_US
dc.contributor.author	Hsieh, Ting-En	en_US
dc.contributor.author	Itoh, Yasushi	en_US
dc.contributor.author	Chang, Edward Yi	en_US
dc.date.accessioned	2017-04-21T06:49:23Z	-
dc.date.available	2017-04-21T06:49:23Z	-
dc.date.issued	2016	en_US
dc.identifier.isbn	978-1-5090-1964-9	en_US
dc.identifier.uri	http://hdl.handle.net/11536/134547	-
dc.language.iso	en_US	en_US
dc.title	The Effect of Surface Passivation on the Electrical Performance of AlG aN/GaNHEMTs with Slant Field Plates	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	國際半導體學院	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.contributor.department	International College of Semiconductor Technology	en_US
dc.identifier.wosnumber	WOS:000392285400095	en_US
dc.citation.woscount	0	en_US
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