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dc.contributor.authorLi, Yimingen_US
dc.contributor.authorHuang, Hsuan-Mingen_US
dc.date.accessioned2014-12-08T15:18:43Z-
dc.date.available2014-12-08T15:18:43Z-
dc.date.issued2010en_US
dc.identifier.isbn978-3-642-12293-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/13456-
dc.identifier.urihttp://dx.doi.org/10.1007/978-3-642-12294-1_30en_US
dc.description.abstractIn this paper, we practically implement a systematical method for thin-film transistor liquid-crystal display (TFT-LCD) design optimization and sensitivity analysis. Based upon a three-dimensional (3D) field solver and a Design of Experiments, we construct a second-order response surface model (RSM) to examine the capacitances' effect on the performance of an interested TFT-LCD pixel. The constructed RSMs are reduced using a step-wise regression. We verify the accuracy using the normal residual plots and their residual of squares. According to the models, we then analyze the sensitivity of the capacitances by considering the design parameters as changing factors (i.e., the size variation and the position shift) under an assumption of Gaussian distribution. Consequently, we further apply the models to optimize the designed circuit. The designing parameters of these models are selected and optimized to fit the designing target of the examined circuit by the genetic algorithm in our unified optimization framework. This computational statistics method predicts the capacitances' effects on the gate delay time and compares with full 3D simulation approaches, it shows the engineering practicability in display panel industry.en_US
dc.language.isoen_USen_US
dc.titleComputational Statistics Approach to Capacitance Sensitivity Analysis and Gate Delay Time Minimization of TFT-LCDsen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1007/978-3-642-12294-1_30en_US
dc.identifier.journalSCIENTIFIC COMPUTING IN ELECTRICAL ENGINEERING SCEE 2008en_US
dc.citation.volume14en_US
dc.citation.spage233en_US
dc.citation.epage240en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000290366900030-
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