Strong Enhancements in Output Power and High-Speed Data Transmission Performances by Using Parallel Oxide-Relief/Zn-Diffusion 850 nm VCSELs

Full metadata record

DC Field	Value	Language
dc.contributor.author	Chi, Kai-Lun	en_US
dc.contributor.author	Chen, Xin-Nan	en_US
dc.contributor.author	Chen, Jye-Hong	en_US
dc.contributor.author	Bowers, J. E.	en_US
dc.contributor.author	Yang, Ying-Jay	en_US
dc.contributor.author	Shi, Jin-Wei	en_US
dc.date.accessioned	2017-04-21T06:49:20Z	-
dc.date.available	2017-04-21T06:49:20Z	-
dc.date.issued	2016	en_US
dc.identifier.isbn	978-4-8855-2306-9	en_US
dc.identifier.issn	2326-5442	en_US
dc.identifier.uri	http://hdl.handle.net/11536/134573	-
dc.description.abstract	By using parallel two high-speed VCSELs, double increase in maximum output power (4 vs. 8mW), negligible degradation in 3-dB electrical-to-optical bandwidth (similar to 25 GHz), and strong enhancement in 46 Gbit/sec data transmission through OM4 MMF is achieved compared with those of single reference.	en_US
dc.language.iso	en_US	en_US
dc.title	Strong Enhancements in Output Power and High-Speed Data Transmission Performances by Using Parallel Oxide-Relief/Zn-Diffusion 850 nm VCSELs	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2016 INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC)	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000392249800056	en_US
dc.citation.woscount	0	en_US
Appears in Collections:	Conferences Paper