High-operation-temperature Aluminum-based SPP Nanolasers

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chou, Yu-Hsun	en_US
dc.contributor.author	Hong, Kuo-Bin	en_US
dc.contributor.author	Chou, Bo-Tsun	en_US
dc.contributor.author	Wu, Yen-Mo	en_US
dc.contributor.author	Shih, Jheng-Hong	en_US
dc.contributor.author	Chung, Yi-Cheng	en_US
dc.contributor.author	Chen, Peng-Yu	en_US
dc.contributor.author	Lin, Tzy-Rong	en_US
dc.contributor.author	Lin, Sheng-Di	en_US
dc.contributor.author	Lu, Tien-Chang	en_US
dc.date.accessioned	2017-04-21T06:49:21Z	-
dc.date.available	2017-04-21T06:49:21Z	-
dc.date.issued	2016	en_US
dc.identifier.isbn	978-4-8855-2306-9	en_US
dc.identifier.issn	2326-5442	en_US
dc.identifier.uri	http://hdl.handle.net/11536/134575	-
dc.description.abstract	Metal-insulator-semiconductor structures has widely adopted in plasmonics lasers. However, we found that the insulator is not necessary if permittivity combination of laser structures is properly designed. Single-mode laser operation was demonstrate in devices without artificial insulator layers. Moreover, the operation temperature can achieve to 353 K.	en_US
dc.language.iso	en_US	en_US
dc.subject	Metal-insulator-semiconductor (MIS) structures	en_US
dc.subject	surface plasmon polariton (SPP)	en_US
dc.subject	Nanolaser	en_US
dc.subject	ZnO	en_US
dc.subject	Aluminum	en_US
dc.title	High-operation-temperature Aluminum-based SPP Nanolasers	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2016 INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC)	en_US
dc.contributor.department	照明與能源光電研究所	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Institute of Lighting and Energy Photonics	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000392249800110	en_US
dc.citation.woscount	0	en_US
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