完整後設資料紀錄
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dc.contributor.authorChang, Liang-Hsienen_US
dc.contributor.authorChen, Chihen_US
dc.contributor.authorHu, Dyi-Chungen_US
dc.contributor.authorTain, Rayen_US
dc.contributor.authorChen, Y. H.en_US
dc.date.accessioned2017-04-21T06:49:18Z-
dc.date.available2017-04-21T06:49:18Z-
dc.date.issued2016en_US
dc.identifier.isbn978-1-5090-4769-7en_US
dc.identifier.issn2150-5934en_US
dc.identifier.urihttp://hdl.handle.net/11536/134598-
dc.description.abstractNanotwinned copper (nt-Cu) is drawing wide attention for it simultaneously demonstrates high strength and high ductility, which are thought to be mutually exclusive. According to previous studies, nanotwinned Cu may be the best structure for resisting electromigration damage. In this study, we deposit (111)-oriented nt-Cu using direct current with suitable additives on PCB substrates. Current density and the plating bath are variables. After copper electroplating, XRD, FIB, EBSD were used to observe the microstructure of the films. We found that the as-deposited Cu has > 30% (111)-oriented nt-Cu on the polymer substrate. The microstructures of the highly (111)-oriented nt-Cu will be presented.en_US
dc.language.isoen_USen_US
dc.subjectnt-Cuen_US
dc.subject(111)-orienteden_US
dc.subjectPCBen_US
dc.subjectelectroplatingen_US
dc.titleFabrication and characterization of electroplated nanotwinned-copper films on polymer substrates(IMPACT-IAAC 2016)en_US
dc.typeProceedings Paperen_US
dc.identifier.journal2016 11TH INTERNATIONAL MICROSYSTEMS, PACKAGING, ASSEMBLY AND CIRCUITS TECHNOLOGY CONFERENCE (IMPACT-IAAC 2016)en_US
dc.citation.spage198en_US
dc.citation.epage200en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000391819600043en_US
dc.citation.woscount0en_US
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