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dc.contributor.authorShirota, R.en_US
dc.contributor.authorYang, B-J.en_US
dc.contributor.authorChiu, Y-Y.en_US
dc.contributor.authorWu, Y-T.en_US
dc.contributor.authorWang, P-Y.en_US
dc.contributor.authorChang, J-H.en_US
dc.contributor.authorYano, M.en_US
dc.contributor.authorAoki, M.en_US
dc.contributor.authorTakeshita, T.en_US
dc.contributor.authorWang, C-Y.en_US
dc.contributor.authorKurachi, I.en_US
dc.date.accessioned2017-04-21T06:49:01Z-
dc.date.available2017-04-21T06:49:01Z-
dc.date.issued2015en_US
dc.identifier.isbn978-1-4673-7362-3en_US
dc.identifier.issn1541-7026en_US
dc.identifier.urihttp://hdl.handle.net/11536/134601-
dc.description.abstractIt has been newly found that shorter intervals between program and erase operations can suppress the oxide degradation more significantly in a 0.05 to 5 sec timeframe. Our new analysis clearly demonstrates the following degradation phenomena: a longer interval yields more trapped charges near the Si surface and surface states. Our results also indicate that the oxide degradation occurs more significantly during the erase-to-program interval than in the program-to-erase interval. These findings suggest that the erasing step causes a self-induced positive FG potential yields an accumulation of trapped holes near the Si surface and also generates surface states during the interval from erase-to-program. In addition, regarding retention characteristics, larger Vt shifts caused by the reduction of surface states and electron detrapping of oxide charges are observed in the longer interval. Based on these results, a new NAND operation scheme is proposed to improve reliability in shorter intervals.en_US
dc.language.isoen_USen_US
dc.subjectcomponenten_US
dc.subjectNAND Flashen_US
dc.subjectreliabilityen_US
dc.subjectFN-tunnelingen_US
dc.subjectenduranceen_US
dc.subjectretentionen_US
dc.titleImprovement of Oxide Reliability in NAND Flash Memories Using Tight Endurance Cycling with Shorter Idling Perioden_US
dc.typeProceedings Paperen_US
dc.identifier.journal2015 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000371888900147en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper