A Single InN Nanopillar Photodetector with Extended Infrared Response Grown by MOCVD

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Hsu, Lung-Hsing	en_US
dc.contributor.author	Kuo, Chien-Ting	en_US
dc.contributor.author	Cheng, Yuh-Jen	en_US
dc.contributor.author	Chen, Kuan-Chao	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.contributor.author	Lin, Shih-Yen	en_US
dc.contributor.author	Lin, Chien-Chung	en_US
dc.date.accessioned	2017-04-21T06:49:16Z	-
dc.date.available	2017-04-21T06:49:16Z	-
dc.date.issued	2016	en_US
dc.identifier.isbn	978-1-9435-8011-8	en_US
dc.identifier.issn	2160-9020	en_US
dc.identifier.uri	http://hdl.handle.net/11536/134616	-
dc.description.abstract	An extended infrared photoresponse is observed in a high quality InN pillar/p-GaN photodetector with self-assembly epitaxy grown by LP-MOCVD. The IR portion photocurrent as high as 14.2% can be measured via AM1.5G solar simulated spectra.	en_US
dc.language.iso	en_US	en_US
dc.title	A Single InN Nanopillar Photodetector with Extended Infrared Response Grown by MOCVD	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)	en_US
dc.contributor.department	光電系統研究所	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Institute of Photonic System	en_US
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000391286403035	en_US
dc.citation.woscount	0	en_US
顯示於類別：	會議論文