Improving Crystalline Quality of Non-Vacuum Processed Cu(In,Ga) Se-2 Thin Films by Femtosecond Laser Annealing

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Li, Jia-Xing	en_US
dc.contributor.author	She, Nian-Zu	en_US
dc.contributor.author	Chang, Yu-Hsuan	en_US
dc.contributor.author	Chen, Shih-Chen	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.contributor.author	Wu, Kuang-Hsiung	en_US
dc.date.accessioned	2017-04-21T06:49:16Z	-
dc.date.available	2017-04-21T06:49:16Z	-
dc.date.issued	2016	en_US
dc.identifier.isbn	978-1-9435-8011-8	en_US
dc.identifier.issn	2160-9020	en_US
dc.identifier.uri	http://hdl.handle.net/11536/134622	-
dc.description.abstract	We demonstrate the advantages of femtosecond laser annealing on non-vacuum CIGS thin films. The PL spectra implied some defect-levels or band-fluctuations were eliminated, and the conversion efficiency and ideal factor were enhanced after laser annealing.	en_US
dc.language.iso	en_US	en_US
dc.title	Improving Crystalline Quality of Non-Vacuum Processed Cu(In,Ga) Se-2 Thin Films by Femtosecond Laser Annealing	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000391286401258	en_US
dc.citation.woscount	0	en_US
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