Grain Size and Plasma Doping Effects on CVD-based 2D Transition Metal Dichalcogenide

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, Chih-Pin	en_US
dc.contributor.author	Lin, Ching-Ting	en_US
dc.contributor.author	Liu, Pang-Shivan	en_US
dc.contributor.author	Yu, Ming-Hue	en_US
dc.contributor.author	Hou, Tuo-Hung	en_US
dc.date.accessioned	2017-04-21T06:48:50Z	-
dc.date.available	2017-04-21T06:48:50Z	-
dc.date.issued	2016	en_US
dc.identifier.isbn	978-1-5090-1493-4	en_US
dc.identifier.uri	http://hdl.handle.net/11536/134641	-
dc.description.abstract	Transition metal dichalcogenide (TMD)-based field effect transistors are currently being actively researched as a post-silicon solution for integrated circuits. This paper discusses two of the major challenges: grain size in polycrystalline TMD monolayer films and chemical doping to improve TMD/metal contacts. The characterization techniques and the correlation with device electrical characteristics are investigated.	en_US
dc.language.iso	en_US	en_US
dc.title	Grain Size and Plasma Doping Effects on CVD-based 2D Transition Metal Dichalcogenide	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)	en_US
dc.citation.spage	501	en_US
dc.citation.epage	504	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000391840000144	en_US
dc.citation.woscount	0	en_US
顯示於類別：	會議論文