標題: | Damage effect of fluorine implantation on PECVD alpha-SiOC barrier dielectric |
作者: | Yang, FM Chang, TC Liu, PT Chen, CW Tai, YH Lou, JC 電子工程學系及電子研究所 光電工程學系 顯示科技研究所 Department of Electronics Engineering and Institute of Electronics Department of Photonics Institute of Display |
關鍵字: | PECVD;SiOC;barrier dielectric;Poole-Frenkel;implantation |
公開日期: | 1-八月-2005 |
摘要: | in this work the dielectric properties of plasma enhanced chemical vapor deposited (PECVD) amorphous SiOC (alpha-SiOC) films with various concentrations of oxygen are investigated for the barrier dielectric application. Experimental results show after fluorine (F) ion implanted into alpha-SiOC film, the leakage current in carbide film is increased due to the generation of trap centers. Afterwards, the traps can be effectively repaired after thermal annealing, leading to the decrease of leakage current further. From the extraction of the current-voltage (J-E) characteristics, the conducting mechanism of the leakage current obeys the Poole-Frenkel type behavior for intrinsic, F-implanted and thermally annealed samples. Also, the barrier height of the F-implanted and thermally annealed samples are extracted and exhibits a higher value than that of the intrinsic sample. (c) 2005 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.nimb.2005.05.013 http://hdl.handle.net/11536/13465 |
ISSN: | 0168-583X |
DOI: | 10.1016/j.nimb.2005.05.013 |
期刊: | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS |
Volume: | 237 |
Issue: | 1-2 |
起始頁: | 301 |
結束頁: | 306 |
顯示於類別: | 會議論文 |