標題: Damage effect of fluorine implantation on PECVD alpha-SiOC barrier dielectric
作者: Yang, FM
Chang, TC
Liu, PT
Chen, CW
Tai, YH
Lou, JC
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
關鍵字: PECVD;SiOC;barrier dielectric;Poole-Frenkel;implantation
公開日期: 1-八月-2005
摘要: in this work the dielectric properties of plasma enhanced chemical vapor deposited (PECVD) amorphous SiOC (alpha-SiOC) films with various concentrations of oxygen are investigated for the barrier dielectric application. Experimental results show after fluorine (F) ion implanted into alpha-SiOC film, the leakage current in carbide film is increased due to the generation of trap centers. Afterwards, the traps can be effectively repaired after thermal annealing, leading to the decrease of leakage current further. From the extraction of the current-voltage (J-E) characteristics, the conducting mechanism of the leakage current obeys the Poole-Frenkel type behavior for intrinsic, F-implanted and thermally annealed samples. Also, the barrier height of the F-implanted and thermally annealed samples are extracted and exhibits a higher value than that of the intrinsic sample. (c) 2005 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.nimb.2005.05.013
http://hdl.handle.net/11536/13465
ISSN: 0168-583X
DOI: 10.1016/j.nimb.2005.05.013
期刊: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Volume: 237
Issue: 1-2
起始頁: 301
結束頁: 306
顯示於類別:會議論文


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