完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Sung, Wen-Li | en_US |
dc.contributor.author | Chang, Han-Tung | en_US |
dc.contributor.author | Chen, Chieh-Yang | en_US |
dc.contributor.author | Chao, Pei-Jung | en_US |
dc.contributor.author | Li, Yiming | en_US |
dc.date.accessioned | 2017-04-21T06:48:52Z | - |
dc.date.available | 2017-04-21T06:48:52Z | - |
dc.date.issued | 2016 | en_US |
dc.identifier.isbn | 978-1-5090-1493-4 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/134650 | - |
dc.description.abstract | We study the impact of random dopant fluctuation (RDF) on electrical characteristics of 10-nm-gatehigh kappa/metal gate gate-all-around silicon nanowire MOSFET devices. To provide the best accuracy of device simulation, model parameters are validated by using full quantum mechanical simulation and calibrated with experimental results. Physical mechanism of RDs inside channel and penetration from the source/drain extensions into the channel is discussed. Electrical characteristic of the device is estimated with respect to different types of RDF. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Gate-all-around | en_US |
dc.subject | Silicon nanowire MOSFET | en_US |
dc.subject | Random dopant fluctuation | en_US |
dc.subject | Modeling | en_US |
dc.subject | Simulation | en_US |
dc.title | Statistical Device Simulation of Characteristic Fluctuation of 10-nm Gate-All-Around Silicon Nanowire MOSFETs Induced by Various Discrete Random Dopants | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) | en_US |
dc.citation.spage | 951 | en_US |
dc.citation.epage | 954 | en_US |
dc.contributor.department | 分子醫學與生物工程研究所 | zh_TW |
dc.contributor.department | 電機工程學系 | zh_TW |
dc.contributor.department | 電信工程研究所 | zh_TW |
dc.contributor.department | Institute of Molecular Medicine and Bioengineering | en_US |
dc.contributor.department | Department of Electrical and Computer Engineering | en_US |
dc.contributor.department | Institute of Communications Engineering | en_US |
dc.identifier.wosnumber | WOS:000391840000273 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 會議論文 |