Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kainz, A. | en_US |
dc.contributor.author | Hortschitz, W. | en_US |
dc.contributor.author | Steiner, H. | en_US |
dc.contributor.author | Hong, Yi-Hong | en_US |
dc.contributor.author | Chen, Chao-Hsuan | en_US |
dc.contributor.author | Zan, Hsiao-Wen | en_US |
dc.contributor.author | Meng, Hsin-Fei | en_US |
dc.contributor.author | Sauter, T. | en_US |
dc.contributor.author | Keplinger, F. | en_US |
dc.date.accessioned | 2019-04-03T06:47:20Z | - |
dc.date.available | 2019-04-03T06:47:20Z | - |
dc.date.issued | 2016-01-01 | en_US |
dc.identifier.issn | 1877-7058 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.proeng.2016.11.439 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/134662 | - |
dc.description.abstract | We present a first proof of principle of applying organic semiconductors as key components in micro-mechanical vibration sensors. The mechanical part of the MOEMS sensor readout is etched into the device layer of an SOI chip and consists of a laterally deflecting inertial mass that features a two-dimensional grid of rectangular holes. An identical grid is evaporated onto a glass chip bonded onto the silicon chip in such way that any deflection of the seismic mass will modulate the light flux passing through the device. The light flux is provided in this case by an OLED and detected by an OPD. It is shown with a proof of concept device that for such sensors organic optoelectronics can replace inorganic ones, which is the starting point for developing a variety of MOEMS sensors based on printed optoelectronic devices. (C) 2016 The Authors. Published by Elsevier Ltd. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | MOEMS | en_US |
dc.subject | MEMS | en_US |
dc.subject | OLED | en_US |
dc.subject | OPD | en_US |
dc.subject | Vibration Sensors | en_US |
dc.title | MOEMS Vibration Sensor with Organic Semiconductor Readout | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.doi | 10.1016/j.proeng.2016.11.439 | en_US |
dc.identifier.journal | PROCEEDINGS OF THE 30TH ANNIVERSARY EUROSENSORS CONFERENCE - EUROSENSORS 2016 | en_US |
dc.citation.volume | 168 | en_US |
dc.citation.spage | 1253 | en_US |
dc.citation.epage | 1256 | en_US |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | 光電工程研究所 | zh_TW |
dc.contributor.department | Institute of Physics | en_US |
dc.contributor.department | Institute of EO Enginerring | en_US |
dc.identifier.wosnumber | WOS:000391641300301 | en_US |
dc.citation.woscount | 2 | en_US |
Appears in Collections: | Conferences Paper |
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