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dc.contributor.authorKainz, A.en_US
dc.contributor.authorHortschitz, W.en_US
dc.contributor.authorSteiner, H.en_US
dc.contributor.authorHong, Yi-Hongen_US
dc.contributor.authorChen, Chao-Hsuanen_US
dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorMeng, Hsin-Feien_US
dc.contributor.authorSauter, T.en_US
dc.contributor.authorKeplinger, F.en_US
dc.date.accessioned2019-04-03T06:47:20Z-
dc.date.available2019-04-03T06:47:20Z-
dc.date.issued2016-01-01en_US
dc.identifier.issn1877-7058en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.proeng.2016.11.439en_US
dc.identifier.urihttp://hdl.handle.net/11536/134662-
dc.description.abstractWe present a first proof of principle of applying organic semiconductors as key components in micro-mechanical vibration sensors. The mechanical part of the MOEMS sensor readout is etched into the device layer of an SOI chip and consists of a laterally deflecting inertial mass that features a two-dimensional grid of rectangular holes. An identical grid is evaporated onto a glass chip bonded onto the silicon chip in such way that any deflection of the seismic mass will modulate the light flux passing through the device. The light flux is provided in this case by an OLED and detected by an OPD. It is shown with a proof of concept device that for such sensors organic optoelectronics can replace inorganic ones, which is the starting point for developing a variety of MOEMS sensors based on printed optoelectronic devices. (C) 2016 The Authors. Published by Elsevier Ltd.en_US
dc.language.isoen_USen_US
dc.subjectMOEMSen_US
dc.subjectMEMSen_US
dc.subjectOLEDen_US
dc.subjectOPDen_US
dc.subjectVibration Sensorsen_US
dc.titleMOEMS Vibration Sensor with Organic Semiconductor Readouten_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1016/j.proeng.2016.11.439en_US
dc.identifier.journalPROCEEDINGS OF THE 30TH ANNIVERSARY EUROSENSORS CONFERENCE - EUROSENSORS 2016en_US
dc.citation.volume168en_US
dc.citation.spage1253en_US
dc.citation.epage1256en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000391641300301en_US
dc.citation.woscount2en_US
Appears in Collections:Conferences Paper


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