Short-Channel ZnON Thin-Film Transistors with Film Profile Engineering

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DC Field	Value	Language
dc.contributor.author	Kuan, Chin-I	en_US
dc.contributor.author	Lin, Horng-Chih	en_US
dc.contributor.author	Li, Pei-Wen	en_US
dc.contributor.author	Huang, Tiao-Yuan	en_US
dc.date.accessioned	2017-04-21T06:48:46Z	-
dc.date.available	2017-04-21T06:48:46Z	-
dc.date.issued	2016	en_US
dc.identifier.isbn	978-1-5090-0726-4	en_US
dc.identifier.uri	http://hdl.handle.net/11536/134677	-
dc.description.abstract	Short-channel zinc oxynitride (ZnON) thin-film transistors (TFTs) were fabricated based on the film profile engineering in combination with e-beam lithographical patterning. ZnON films were deposited using reactive magnetron sputtering in N-2/O-2 ambient and exhibit a Hall mobility of 95 cm(2)/V-s. A ZnON TFT with channel length of 147nm shows high on/off current ratio of 5x10(7) and field-effect mobility of 9.1 cm(2)/Vs, which are superior or comparable to their counterparts of IGZO or ZnO TFTs.	en_US
dc.language.iso	en_US	en_US
dc.title	Short-Channel ZnON Thin-Film Transistors with Film Profile Engineering	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)	en_US
dc.citation.spage	66	en_US
dc.citation.epage	67	en_US
dc.contributor.department	電機學院	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	College of Electrical and Computer Engineering	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000391250500029	en_US
dc.citation.woscount	0	en_US
Appears in Collections:	Conferences Paper