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dc.contributor.authorHu, Weiguoen_US
dc.contributor.authorFauzi, Mohd Ermanen_US
dc.contributor.authorIgarashi, Makotoen_US
dc.contributor.authorHigo, Akioen_US
dc.contributor.authorLee, Ming-Yien_US
dc.contributor.authorLi, Yimingen_US
dc.contributor.authorUsami, Noritakaen_US
dc.contributor.authorSamukawa, Seijien_US
dc.date.accessioned2017-04-21T06:48:44Z-
dc.date.available2017-04-21T06:48:44Z-
dc.date.issued2013en_US
dc.identifier.isbn978-1-4799-3299-3en_US
dc.identifier.issn0160-8371en_US
dc.identifier.urihttp://hdl.handle.net/11536/134727-
dc.description.abstractA Ge/Si type-II quantum dot (QD) has been developed for use in all-Si intermediate-band solar cell (IBSC) applications. A top-down process is used to fabricate the ultra-high-quality QD superlattice. A newly developed 3D finite element method was used to solve several key design problems in achieving a practical structure. Theoretical calculations revealed that a heavy hole state can act as an ideal intermediate band when the interdot space ranges from 0.5 to 4 nm. An IBSC based on this superlattice dramatically enhanced conversion efficiency for concentration applications. For one-sun applications, H-passivizing Si and/or regrowthing amorphous SiC have a great potential to improve the conversion efficiency.en_US
dc.language.isoen_USen_US
dc.subjectquantum doten_US
dc.subjectamorphous materialsen_US
dc.subjectphotovoltaic cellsen_US
dc.subjectsiliconen_US
dc.titleType-II Ge/Si Quantum Dot superlattice for Intermediate-band Solar Cell Applicationsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)en_US
dc.citation.spage1021en_US
dc.citation.epage1023en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000340054100225en_US
dc.citation.woscount0en_US
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