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dc.contributor.authorKo, C. T.en_US
dc.contributor.authorHsiao, Z. C.en_US
dc.contributor.authorChang, Y. J.en_US
dc.contributor.authorChen, P. S.en_US
dc.contributor.authorHuang, J. H.en_US
dc.contributor.authorFu, H. C.en_US
dc.contributor.authorHuang, Y. J.en_US
dc.contributor.authorChiang, C. W.en_US
dc.contributor.authorLee, C. K.en_US
dc.contributor.authorChang, H. H.en_US
dc.contributor.authorTsai, W. L.en_US
dc.contributor.authorChen, Y. H.en_US
dc.contributor.authorLo, W. C.en_US
dc.contributor.authorChen, K. N.en_US
dc.date.accessioned2017-04-21T06:48:12Z-
dc.date.available2017-04-21T06:48:12Z-
dc.date.issued2012en_US
dc.identifier.isbn978-1-4673-1965-2en_US
dc.identifier.urihttp://hdl.handle.net/11536/134747-
dc.description.abstractIn this study, a wafer-level 3D integration scheme with Cu TSVs based on Cu/Sn micro-bump and BCB adhesive hybrid bonding is demonstrated. To realize the signal transmission effects in high speed digital signaling via Cu TSV and Cu/Sn micro-joint interconnection, the insertion loss was investigated by simulation analysis with variable TSV pitches, micro-bump diameters and chip thicknesses. Key technologies include TSV fabrication, micro-bumping, hybrid scheme making, hybrid bonding, wafer thinning and backside RDL formation were well developed and integrated to perform the 3D integration scheme. 5 mu m TSV, 10 mu m microbump, 20 mu m pitch, 40 mu m thin wafer, and 250 degrees C low temperature W2W hybrid bonding have been successfully integrated in the integration platform. The 3D scheme was characterized and assessed to have excellent electrical performance and reliability, and is potentially to be applied for 3D product applications.en_US
dc.language.isoen_USen_US
dc.titleStructural Design, Process, and Reliability of a Wafer-Level 3D Integration Scheme with Cu TSVs Based on Micro-bump/Adhesive Hybrid Wafer Bondingen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2012 IEEE 62ND ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC)en_US
dc.citation.spage1en_US
dc.citation.epage7en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000309162000001en_US
dc.citation.woscount2en_US
Appears in Collections:Conferences Paper