標題: Characteristics of the SiN Uniaxial Strained NMOSFET with Channel Fluorine Implantation
作者: Chen, Yung-Yu
Hsieh, Chih-Ren
Chiu, Fang-Yu
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: fluorine;strain
公開日期: 2012
摘要: Channel fluorine implantation (CFI) has been successfully integrated with silicon nitride contact etch stop layer (SiN CESL) to further improve the channel hot electron stress (CHES) and constant voltage stress (CVS) reliability of n-channel metal-oxide-semiconductor field-effect-transistor with HfO2/SiON gate stack. Although the improvement of transconductance, drain current and subthreshold swing due to the fluorine passivation is screened out by the effect of uniaxial tensile strain, the result clearly demonstrates that integrating the CFI process in the SiN CESL-strained device can further suppress the CHES- and CVS-induced threshold voltage shift.
URI: http://dx.doi.org/10.4028/www.scientific.net/AMR.383-390.3178
http://hdl.handle.net/11536/134754
ISBN: 978-3-03785-295-8
ISSN: 1022-6680
DOI: 10.4028/www.scientific.net/AMR.383-390.3178
期刊: MANUFACTURING SCIENCE AND TECHNOLOGY, PTS 1-8
Volume: 383-390
起始頁: 3178
結束頁: +
顯示於類別:會議論文