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dc.contributor.authorLi, Yimingen_US
dc.contributor.authorSu, Hsin-Wenen_US
dc.contributor.authorChen, Chieh-Yangen_US
dc.contributor.authorCheng, Hui-Wenen_US
dc.contributor.authorChen, Yu-Yuen_US
dc.contributor.authorChang, Han-Tungen_US
dc.date.accessioned2017-04-21T06:48:22Z-
dc.date.available2017-04-21T06:48:22Z-
dc.date.issued2012en_US
dc.identifier.isbn978-1-4665-6275-2en_US
dc.identifier.urihttp://hdl.handle.net/11536/134780-
dc.description.abstractIn this work, we statistically study characteristic fluctuation of 16-nm-gate high-kappa/metal gate (HKMG) MOSFETs by random-discrete-dopants (RDDs) inside silicon channel and random-interface-traps (RITs) at high-kappa/silicon interface. Randomly generated devices with three-dimensional (3D) RDDs inside device channel and 2D RITs at HfO2/Si interface are incorporated into quantum mechanically corrected 3D device simulation. Device characteristics, as influenced by different degrees of fluctuation, are discussed in relation to RITs near the source and drain ends, and RDDs near the device channel surface and silicon substrate. Characteristic fluctuations are affected to different extents by the random combinatorial RDDs and RITs. Nonlinearly correlated RDDs and RITs further violate the statistical assumption of independent identical distributions between the RDDs- and RITs-induced random variables. Consequently, for the studied 16-nm-gate HKMG MOSFETs, the threshold voltage fluctuation induced by the combined RDs and ITs is less than their statistical sum due to local interaction of surface potentials resulting from the RDDs and RITs simultaneously. In contrast to RDDs fluctuation, the screening effect of device\'s inversion layer cannot effectively screen potential\'s variation resulting from RITs; thus, devices still have noticeable gate capacitance characteristic fluctuation under high gate bias.en_US
dc.language.isoen_USen_US
dc.subjectDrain-induced barrier loweringen_US
dc.subjectSubthreshold swingen_US
dc.subjectRandom-interface-trapsen_US
dc.subjectrandom-discrete-dopantsen_US
dc.subjectnear sourceen_US
dc.subjectnear channel surfaceen_US
dc.subjectrandom position effecten_US
dc.subjectfluctuationen_US
dc.subjectMOSFETsen_US
dc.titleOn Statistical Variation of MOSFETs Induced by Random-Discrete-Dopants and Random-Interface-Trapsen_US
dc.typeProceedings Paperen_US
dc.identifier.journalNANOTECHNOLOGY 2012, VOL 2: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONALen_US
dc.citation.spage554en_US
dc.citation.epage557en_US
dc.contributor.department資訊工程學系zh_TW
dc.contributor.departmentDepartment of Computer Scienceen_US
dc.identifier.wosnumberWOS:000391249200144en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper