Novel 140 degrees C Hybrid Thin Film Solar Cell/Transistor Technology with 9.6% Conversion Efficiency and 1.1 cm2/V-s Electron Mobility for Low-Temperature Substrates

Abstract

For the first time, we report a low temperature silicon thin film deposition technology using high density plasma for high performance and low cost solar cells with embedded transistor modules. For process temperature at 140 degrees C, energy conversion efficiency of 9.6% and electron mobility of 1.1 cm(2)/V-s have been achieved. Device performance with process temperature down to 90 degrees C and 60 degrees C has also been examined in depth. This very low process temperature technology can integrate energy harvesting with electronics on inexpensive and flexible substrates.