標題: | III-V MOSFETs with a New Self-Aligned Contact |
作者: | Zhang, Xingui Guo, Huaxin Ko, Chih-Hsin Wann, Clement H. Cheng, Chao-Ching Lin, Hau-Yu Chin, Hock-Chun Gong, Xiao Lim, Phyllis Shi Ya Luo, Guang-Li Chang, Chun-Yen Chien, Chao-Hsin Han, Zong-You Huang, Shih-Chiang Yeo, Yee-Chia 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2010 |
摘要: | We report the first demonstration of III-V n-MOSFETs with self-aligned contact technology. The self-aligned contact was formed using a salicide-like process which is compatible with CMOS process flow. A new epitaxy process was developed to selectively form a thin continuous germanium-silicon (GeSi) layer on gallium arsenide (GaAs) source and drain (S/D) regions. Nickel was deposited and annealed to form NiGeSi, and unreacted metal was removed. A second anneal diffuses Ge and Si into GaAs to form heavily n+ doped regions, and a novel self-aligned nickel germanosilicide (NiGeSi) ohmic contact was achieved. MOSFETs with the new self-aligned metallization process were realized. |
URI: | http://hdl.handle.net/11536/134864 |
ISBN: | 978-1-4244-7637-4 |
期刊: | 2010 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS |
起始頁: | 233 |
結束頁: | + |
顯示於類別: | 會議論文 |