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dc.contributor.authorZhang, Xinguien_US
dc.contributor.authorGuo, Huaxinen_US
dc.contributor.authorKo, Chih-Hsinen_US
dc.contributor.authorWann, Clement H.en_US
dc.contributor.authorCheng, Chao-Chingen_US
dc.contributor.authorLin, Hau-Yuen_US
dc.contributor.authorChin, Hock-Chunen_US
dc.contributor.authorGong, Xiaoen_US
dc.contributor.authorLim, Phyllis Shi Yaen_US
dc.contributor.authorLuo, Guang-Lien_US
dc.contributor.authorChang, Chun-Yenen_US
dc.contributor.authorChien, Chao-Hsinen_US
dc.contributor.authorHan, Zong-Youen_US
dc.contributor.authorHuang, Shih-Chiangen_US
dc.contributor.authorYeo, Yee-Chiaen_US
dc.date.accessioned2017-04-21T06:49:53Z-
dc.date.available2017-04-21T06:49:53Z-
dc.date.issued2010en_US
dc.identifier.isbn978-1-4244-7637-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/134864-
dc.description.abstractWe report the first demonstration of III-V n-MOSFETs with self-aligned contact technology. The self-aligned contact was formed using a salicide-like process which is compatible with CMOS process flow. A new epitaxy process was developed to selectively form a thin continuous germanium-silicon (GeSi) layer on gallium arsenide (GaAs) source and drain (S/D) regions. Nickel was deposited and annealed to form NiGeSi, and unreacted metal was removed. A second anneal diffuses Ge and Si into GaAs to form heavily n+ doped regions, and a novel self-aligned nickel germanosilicide (NiGeSi) ohmic contact was achieved. MOSFETs with the new self-aligned metallization process were realized.en_US
dc.language.isoen_USen_US
dc.titleIII-V MOSFETs with a New Self-Aligned Contacten_US
dc.typeProceedings Paperen_US
dc.identifier.journal2010 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERSen_US
dc.citation.spage233en_US
dc.citation.epage+en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000287495500089en_US
dc.citation.woscount14en_US
Appears in Collections:Conferences Paper