標題: III-V MOSFETs with a New Self-Aligned Contact
作者: Zhang, Xingui
Guo, Huaxin
Ko, Chih-Hsin
Wann, Clement H.
Cheng, Chao-Ching
Lin, Hau-Yu
Chin, Hock-Chun
Gong, Xiao
Lim, Phyllis Shi Ya
Luo, Guang-Li
Chang, Chun-Yen
Chien, Chao-Hsin
Han, Zong-You
Huang, Shih-Chiang
Yeo, Yee-Chia
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2010
摘要: We report the first demonstration of III-V n-MOSFETs with self-aligned contact technology. The self-aligned contact was formed using a salicide-like process which is compatible with CMOS process flow. A new epitaxy process was developed to selectively form a thin continuous germanium-silicon (GeSi) layer on gallium arsenide (GaAs) source and drain (S/D) regions. Nickel was deposited and annealed to form NiGeSi, and unreacted metal was removed. A second anneal diffuses Ge and Si into GaAs to form heavily n+ doped regions, and a novel self-aligned nickel germanosilicide (NiGeSi) ohmic contact was achieved. MOSFETs with the new self-aligned metallization process were realized.
URI: http://hdl.handle.net/11536/134864
ISBN: 978-1-4244-7637-4
期刊: 2010 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS
起始頁: 233
結束頁: +
Appears in Collections:Conferences Paper