標題: In-situ Transmission Electron Microscopy Study of Nanotwinned Copper under Electromigration
作者: Liao, Chien-Neng
Chen, Kuan-Chia
Wu, Wen-Wei
Chen, Lih-Juann
Tu, K. N.
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2010
摘要: Nanotwinned copper has drawn growing attention recently due to its substantially enhanced mechanical strength and negligible increase in electrical resistivity. The stability of nanotwins under mechanical and electrical stressing becomes a critical consideration. Using a high resolution transmission electron microscopy, we observed that the {112} incoherent twin boundary (TB) and {111} coherent TB migrate at a rate of 0.06 similar to 0.09 nm/s in copper under an electric current density of 2x10(6) A/cm(2). The TB migration is possibly associated with an atomic step moving along either (111) or {112} plane and the TB migration rate is mainly controlled by the incubation time of forming new atomic steps. To form such atomic steps, EM-induced diffusion at junctions where TBs meet a grain boundary or free surface may play an important role.
URI: http://hdl.handle.net/11536/134875
ISBN: 978-1-4244-3543-2
期刊: INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2
起始頁: 254
結束頁: +
顯示於類別:會議論文