標題: | In-situ Transmission Electron Microscopy Study of Nanotwinned Copper under Electromigration |
作者: | Liao, Chien-Neng Chen, Kuan-Chia Wu, Wen-Wei Chen, Lih-Juann Tu, K. N. 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 2010 |
摘要: | Nanotwinned copper has drawn growing attention recently due to its substantially enhanced mechanical strength and negligible increase in electrical resistivity. The stability of nanotwins under mechanical and electrical stressing becomes a critical consideration. Using a high resolution transmission electron microscopy, we observed that the {112} incoherent twin boundary (TB) and {111} coherent TB migrate at a rate of 0.06 similar to 0.09 nm/s in copper under an electric current density of 2x10(6) A/cm(2). The TB migration is possibly associated with an atomic step moving along either (111) or {112} plane and the TB migration rate is mainly controlled by the incubation time of forming new atomic steps. To form such atomic steps, EM-induced diffusion at junctions where TBs meet a grain boundary or free surface may play an important role. |
URI: | http://hdl.handle.net/11536/134875 |
ISBN: | 978-1-4244-3543-2 |
期刊: | INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2 |
起始頁: | 254 |
結束頁: | + |
顯示於類別: | 會議論文 |